Pham教授、博士課程のHu Yifan君、Liu Min君、加々美君、修士課程のLi君、OBのTuo Fan氏が沖縄で開催された国際学会IcAUMS2025で下記の発表を行いました。

[22aPS-3] Y. Hu, K. Sato, R. Zhang, K. Ishida, P. N. Hai, “Growth of Co thin Films with Low Roughness by ALD for 3D Magnetic Memory”.

[22aB-3] W. Li, H. Ho Hoang, S. Takahashi, Y. Hirayama, Y. Kato, P. N. Hai, “Growth of Highly Textured BiSb Topological Insulator on Si/SiOx substrates for Spin-Orbit Torque Devices Using TiOx/ MgO Buffer Layers”.

[22pC-3] M. Liu, R. Zhang, Q. Le, B. York, C. Hwang, X. Liu, M. Gribelyuk, X. Xu, S. Le, M. Maeda, F. Tuo, Y. Tao, H. Takano, P. N. Hai, “Spin Hall sensor using topological insulator”.

[22pB-9] S. Kagami, O. Fujie, D. Ito, Q. Le, B. York, C. Hwang, X. Liu, S. Le, M. Maeda, T. Fan, Y. Tao, H. Takano, P. N. Hai, “Role of Pt and Bi on the giant spin Hall effect in topological semimetal YPtBi”.

[22pB-10] F. Tuo, Q. Le, B. R. York, C. Hwang, X. Liu, M. A. Gribelyuk, S. Le, L. Xu, J. James, J. Ortega, M. Maeda, Y. Tao, H. Takano, M. Liu, R. Zhang, S. Namba, P. N. Hai, “Doped BiSbX Topological Insulator For Spin-Orbit Torque Devices”.

[22pB-12] P. N. Hai, K. Ishida, K. Sato, “Spin Hall effect in Platinum deposited by atomic layer deposition for 3D spin-orbit torque devices”.