博士課程のKhang君が米国シカゴで開催中のSpintech X国際学会で下記の発表を行いました。

Observation of topological Hall effect and field-free stable skyrmions in MnGa/BiSb bi-layers at room temperature.

Nguyen Huynh Duy Khang, Tuo Fan, Pham Nam Hai

ハノイで開催されたVIETNAM-JAPAN SCIENCE AND TECHNOLOGY SYMPOSIUM 2019 (VJST2019) にPham准教授が基調講演を行いました。

G1-1-K-098

(Keynote) SPIN HALL EFFECT IN TOPOLOGICAL INSULATORS: FROM FUNDAMENTAL RESEARCHES TO SPINTRONIC DEVICE APPLICATIONS

Pham Nam Hai, Nguyen Huynh Duy Khang,  Takanori Shirokura, Kenichiro Yao , Yugo Ueda

また、共同研究者のアィン氏が下記の招待講演を行いました。

G1-2-I-099

FE-BASED NARROW-GAP FERROMAGNETIC SEMICONDUCTORS: NEW APPROACH TO SPIN-BASED ELECTRONICS

Le Duc Anh, Nguyen Thanh Tu, Pham Nam Hai, Masaaki Tanaka

東京工業大学大岡山キャンパスで開催した第66回応用物理学会春季学術講演会でD3のKhang君とHiep君、M2の山根君、M1の長南君、共同研究者のNguyen氏が下記の発表を行いました。

[12a-M101-9] Large Unidirectional Magnetoresistance in GaMnAs/BiSb bilayers
〇Nguyen HuynhDuy Khang、Pham Nam Hai

[12p-M101-7] Heavily Fe-doped n-type ferromagnetic semiconductor (In,Fe)Sb with high Curie temperature and large magnetic anisotropy
〇Tu Thanh Nguyen、Nam Hai Pham、Duc Anh Le、Masaaki Tanaka

[12p-M101-11] Large spin-dependent magnetoresistance and output voltage in the nanoscale Si spin-valve devices
〇Dinhhiep Duong、Masaaki Tanaka、Namhai Pham

[12p-M101-12] Fabrication and evaluation of lateral spin-valve devices using MnAs spin injector
〇Keita Yamane、Kenichiro Yao、Masaaki Tanaka、Pham Nam Hai

[12p-M101-13] Large spin-valve effect in a lateral spin-valve device with MnGa electrodes
〇Koki Chonan、Nguyen Huynh Duy Khang、Masaaki Tanaka、Pham Nam Hai

名古屋国際会議場で開催される第79回応用物理学会秋季学術講演会でD2のKhang君、M2の西嶋君、八尾君、M1の長南君が下記の発表を行います。

[20a-131-8] Room-temperature field-free formation of stable skyrmions in BiSb/MnGa bi-layers
〇Nguyen Huynh Duy Khang, Fan Tuo, Hai Pham Nam

[21a-131-5] Crystal Growth of BiSb topological insulator on GaAs(001), (111)A and (111)B substrates
〇Kenichiro Yao, Duy Khang Nguyen Huynh, Masataka Ichimura, Nam Hai Pham

[21a-131-7] Fabrication and evaluation of Fe delta-doped (In,Fe)Sb high sensitivity magnetic sensors
〇Kento Nishijima, Masaaki Tanaka, Nam Hai Pham

[21a-131-8] Spin dependent transport characteristics of spin bipolar transistors based on Fe doped ferromagnetic semiconductors
〇Koki Chonan, Yuto Arakawa, Masaaki Tanaka, Pham Nam Hai

中国の上海で開催された国際学会20th International Conference on Molecular Beam Epitaxy (ICMBE 2018)にM2の八尾君と西嶋君,共同研究者のAnh氏と田中教授（東京大学）が下記の発表を行いました。

• [Fr-C2-3] Kento Nishijima, Masaaki Tanaka, Pham Nam Hai, “Fe delta-doped (In,Fe)Sb ferromagnetic semiconductor thin films for magnetic-field sensors with ultrahigh sensitivity”.
• [Fr-C2-4] Kenichiro Yao, Nguyen Huynh Duy Khang, Pham Nam Hai, “Influence of crystal orientation and surface termination on the growth of BiSb topological insulator thin films on GaAs substrates”.
• [We-C2-1]Le Duc Anh, Pham Nam Hai, and Masaaki Tanaka, “Voltage-Controlled Magneto-conductance in N-type Ferromagnetic Semiconductor (In,Fe)As-based Spin Esaki Diodes”
• [Invited] [Th-C2-1] Masaaki Tanaka, Le Duc Anh, Nguyen Thanh Tu, and Pham Nam Hai. “New n-type and p-type ferromagnetic semiconductors with high T_C“.

博士課程のHiep君、Khang君と修士課程の八尾君が国際学会Intermag2018に下記の発表を行いました。

[DC-02]Khang Nguyen, Yugo Ueda, Nam Hai Pham, “Ultra-low-power  spin-orbit-torque switching using the colossal spin Hal effect in BiSb topological insulator”

[DC-03]Kenichiro Yao,  Takanori Shirokura, Nam Hai Pham, “Role of surface states in the generation of the colossal spin Hal effect in BiSb topological insulator”

[HD-06] Hiep Duong, Masaaki Tanaka, Nam Hai Pham, “Large spin-valve effect in Si nano spin-valve devices”

第６5回応用物理学会春季学術講演会で、博士研究員のTin氏、D3のHiep君、D2のKhang君、B4の白倉君、共同研究者のNguyen氏、小林氏、および坂本氏が下記の発表を行います。

[17p-D104-3] Room-temperature colossal spin Hall effect in topological insulator Bi_0.9Sb_0.1(012) thin films for ultra-low-power spin-orbit-torque switching
〇Nguyen HuynhDuy Khang、Yugo Ueda、Hai Pham Nam

[17p-P10-89] Inverse spin valve effect in nano-scale Si-based spin-valve devices
〇Dinhhiep Duong、Masaaki Tanaka、Nam Hai Pham

[17p-D104-4] Temperature dependence of the colossal spin hall effect in a BiSb(001)/MnAs bi-layer
〇Takanori Shirokura、Kenichiro Yao、Pham Nam Hai

[20a-D104-3] Electrical control of ferromagnetism in the n-type ferromagnetic semiconductor (In,Fe)Sb with high Curie temperature
〇Tu Thanh Nguyen、Nam Hai Pham、Duc Anh Le、Masaaki Tanaka

[20a-D104-9] Magneto-thermopower in Ferromagnetic Semiconductor In_1-xFe_xSb
〇CONG TINH BUI、CHRISTINA GARCIA、NGUYEN THANH TU、MASAAKI TANAKA、PHAM NAM HAI

[20a-D104-1] Effect of Be Doping on the Electronic Structure of n-Type Ferromagnetic Semiconductor (In,Fe)As
〇MASAKI KOBAYASHI、HISAO KIUCHI、HIDEHARU NIWA、JUN MIYAWAKI、ATSUSHI FUJIMORI、LE DUC ANH、PHAM NAM HAI、MASAAKI TANAKA、MASAHARU OSHIMA、YOSHIHISA HARADA

[20a-D104-7] Magnetization process of the insulating ferromagnetic semiconductor (Al,Fe)Sb
〇Shoya Sakamoto、Duc Anh Le、Nam Hai Pham、Yukiharu Takeda、Masaki Kobayashi、Ryosho Nakane、Yuki Wakabayashi、Yosuke Nonaka、Keisuke Ikeda、Zhendong Chi、Yuxuan Wan、Masahiro Suzuki、Yuji Saitoh、Hiroshi Yamagami、Masaaki Tanaka、Atsushi Fujimori

D3のHiep君、D1のKhang君、共同研究者のAnh氏および田中教授がJunjirou Kanamori Memorial International Symposium – New Horizon of Magnetism- (Sep. 27-29 2017)に下記の発表を行いました。

[P71] Tuning of Magnetoconductance by Electrical Control of Band Alignment in a n⁺-(In,Fe)As/p⁺-InAs Esaki Diode
Le Duc Anh, Pham Nam Hai and Masaaki Tanaka

[P82] Inverse spin-valve effect in spin-valve devices with nanoscale Si channels
D. D. Hiep, M. Tanaka, and P. N. Hai

[P83] Magnetic and structural properties of MnGa thin films grown on
Bi_0.8Sb_0.2 topological insulator
N. H. D. Khang, Y. Ueda, and P. N. Hai

[S2] (Invited) Recent progress and topics in semiconductor spintronics and ferromagnetic semiconductors
M. Tanaka, S. Ohya, L.D. Anh, N.T. Tu, I. Muneta, and P.N. Hai

D3のHiep君が国際学会SSDM2017で下記の研究成果を発表しました。

[PS-12-08] Inverse spin-valve effect in MBE-grown nanoscale Si spin-valve devices
D. H. Duong, M. Tanaka, N. H. Pham

Pham准教授がThe 29th International Conference on Defects in Semiconductors(ICDS-29)の国際学会で下記の招待講演を行いました。

[ThA3-I2 (Invited)] Fe-doped ferromagnetic semiconductors for high-performance semiconductor spin devices
Pham Nam Hai, Tomohiro Ostuka, Munehiko Yoshida, Nguyen Thanh Tu, Le Duc Anh, and Masaaki Tanaka