日本光学会年次学術講演会(Optics & Photonics Japan 2023)でD2の西山君が下記の発表を行いました。本研究は中央大学の河野研究室との共同研究の成果です。

[29aF9]トポロジカル絶縁体BiSbのテラヘルツ吸収特性
○西山 黎，ファム ナム ハイ，橋谷田 俊，河野 行雄

Microsoft社や欧米の研究機関で活発に開発を進めているノイズ耐性があるトポロジカル量子ビットに関するセミナーをご案内します。

時間：11月24日（金）の13H30～

場所：南3号館第1会議室（S3-201号室)

講師：Dr. Tobias Schmitt (Forschungszentrum Jülich)

Title:
Versatility of selective area growth and stencil lithography for topological insulator-superconductor hybrid devices

Abstract:
As a potential platform to realize elusive topological superconductivity, hybrid devices of topological insulators (TIs) and conventional s-wave superconductors (S) form an attractive field of research. However, the fabrication of pristine hybrid devices with transparent S-TI interfaces is often hampered by degradation at ambient conditions. As a possible solution to this challenge, a novel technique combining selective area growth and stencil lithography to fabricate these devices under ultra-high vacuum (UHV) conditions has recently been reported. In my talk, I will showcase the versatility of this UHV fabrication technique for the implementation of several S-TI hybrid devices, ranging from Josephson junctions to superconducting hybrid qubits, and discuss their characterization.