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研究成果

査読付き論文　　解説・著書　　国際学会、国内学会の招待講演　　特許
 

■　査読付き論文

97. Ken Ishida, Kota Sato, Pham Nam Hai, “Spin Hall effect in platinum deposited by atomic layer deposition”, Appl. Phys. Lett. 125, 162404 (2024).
96. Zhang Ruixian, Ho Hoang Huy, Takanori Shirokura, Pham Nam Hai, Quang Le, Brian York, Cherngye Hwang, Xiaoyong Liu, Michael Gribelyuk, Xiaoyu Xu, Son Le, Maki Maeda, Tuo Fan, Yu Tao, and Hisashi Takano, “High spin Hall angle in BiSb topological insulator and perpendicularly magnetized CoFeB/MgO multilayers with metallic interfacial layers”, Appl. Phys. Lett. 124, 072402 (2024).
95. Sho Kagami, Takanori Shirokura, Pham Nam Hai, “Effects of post-growth annealing in YPtBi topological semimetal and Co/Pt perpendicular magnetization multilayers”, Jpn. J. Appl. Phys. 63, 02SP98 (2024).
94. Takanori Shirokura, Nguyen Huynh Duy Khang, Pham Nam Hai, “High-efficient spin orbit torque generated by topological semimetal YPtBi deposited on oxidized Si substrates”, Appl. Phys. Lett. 124, 052402/1-6 (2024).
93. Ken Ishida, Takanori Shirokura, Pham Nam Hai, “Enhanced spin Hall effect at high temperature in non-centrosymmetric silicide TaSi2 driven by Berry phase monopoles”, Appl. Phys. Lett. 123, 262402 /1-5 (2023).
92. Ho Hoang Huy, Zhang Ruixian, Takanori Shirokura, Shigeki Takahashi, Yoshiyuki Hirayama, Pham Nam Hai, “Integration of BiSb Topological Insulator and CoFeB/MgO With Perpendicular Magnetic Anisotropy Using an Oxide Interfacial Layer for Ultralow Power SOT-MRAM Cache Memory”, IEEE Trans. Magn. 59, 3400905/1-5 (2023).
91. Takanori Shirokura, Pham Nam Hai, “High temperature spin Hall effect in topological insulator”, Appl. Phys. Lett. 122, 232404 (2023).
90. H. H. Huy, J. Sasaki, N. H. D. Khang, S. Namba, P. N. Hai, Q. Le, B. York, C. Hwang, X. Liu, M. Gribelyuk, X. Xu, S. Le, R. Nagabhirava, M. Ho and H. Takano, “Large spin Hall angle in sputtered BiSb topological insulator on top of various ferromagnets with in-plane magnetization for SOT reader application”, IEEE Trans. Magn. 59, 3000904/1-4 (2023).
89. Shobhit Goel, Nguyen Huynh Duy Khang, Yuki Osada, Le Duc Anh, Pham Nam Hai, Masaaki Tanaka, “Room-temperature spin injection from a ferromagnetic semiconductor”, Scientific Reports, 13, 2181 (2023).
88. Ho Hoang Huy, Julian Sasaki, Nguyen Huynh Duy Khang, Shota Namba, Pham Nam Hai, Quang Le, Brian York, Cherngye Hwang, Xiaoyong Liu, Michael Gribelyuk, Xiaoyu Xu, Son Le, Michael Ho, and Hisashi Takano, “Large inverse spin Hall effect in BiSb topological insulator for 4 Tb/in2 magnetic recording technology”, Appl. Phys. Lett. 122, 052401 (2023).
87. Julian Sasaki, Shota Namba, Shigeki Takahashi, Yoshiyuki Hirayama, and Pham Nam Hai, “Highly efficient spin current source using BiSb topological insulator / NiO bilayers”, Jpn. J. Appl. Phys. 62, SC1005 (2023).
86. Takanori Shirokura and Pham Nam Hai, “Giant spin Hall effect in half-Heusler alloy topological semimetal YPtBi grown at low temperature”, AIP Advances 12, 125116 (2022).
85. I. Muneta, T. Shirokura, P. N. Hai, K. Kakushima, K. Tsutsui, H. Wakabayashi, “Ferromagnetism modulation by ultralow current in a two-dimensional polycrystalline molybdenum disulphide atomic layered structure”, Scientific Reports 12, 17199 (2022).
84. M. Kobayashi, N. H. D. Khang, T. Takeda, K. Araki, R. Okano, M. Suzuki, K. Kuroda, K. Yaji, K. Sugawara, S. Souma, K. Nakayama, K. Yamauchi, M. Kitamura, K. Horiba, A. Fujimori, T. Sato, S. Shin, M. Tanaka, and P. N. Hai, “Rhombic Fermi surfaces in a ferromagnetic MnGa thin film with perpendicular magnetic anisotropy”, Phys. Rev. Materials 6, 074403 (2022).
83. T. Shirokura , T. Kondo, and P. N. Hai, “Effect of stoichiometry on the spin Hall angle of the half-Heusler alloy topological semimetal YPtBi”, Jpn. J. Appl. Phys. 61, 073001 (2022).
82. N. H. D. Khang, T. Shirokura, T. Fan, M. Takahashi, N. Nakatani, D. Kato, Y. Miyamoto, and P. N. Hai, “Nanosecond ultralow power spin orbit torque magnetization switching driven by BiSb topological insulator”, Appl. Phys. Lett. 120, 152401 (2022)
81. J. Sasaki, H. H. Huy, N. H. D. Khang, P. N. Hai, Q. Le, B. York, X. Liu, S. Le, C. Hwang, M. Ho, H. Takano, “Improvement of the effective spin Hall angle by inserting an interfacial layer in sputtered BiSb topological insulator (bottom)/ferromagnet with in-plane magnetization”, IEEE Trans. Magn. 58, 3200404/1-4 (2022).
80. T. Fan, N. H. D. Khang, S. Nakano, P. N. Hai, “Ultrahigh efficient spin orbit torque magnetization switching in fully sputtered topological insulator and ferromagnet multilayers”, Scientific Reports 12, 2998 (2022).
79. T. Shirokura, T. Fan, N.H.D. Khang, T. Kondo, P. N. Hai, “Efficient spin current source using a half-Heusler alloy topological semimetal with back end of line compatibility”, Scientific Reports, 12, 2426 (2022).
78. N. T. Tu, T. Otsuka, Y. Arakawa, L. D. Anh, M. Tanaka, and P. N. Hai, “Spin transport in fully ferromagnetic p–n junctions”, J. App. Phys., 131, 013902 (2022).
77. T. Shirokura and P. N. Hai, “Angle resolved second harmonic technique for precise evaluation of spin orbit torque in strong perpendicular magnetic anisotropy systems”, Appl. Phys. Lett. 119, 222402 (2021).
76. H. Wu, A. Chen, P. Zhang, H. He, J. Nance, Ch. Guo, J. Sasaki, T. Shirokura, P. N. Hai, B. Fang, S. A. Razavi, K. Wong, Y. Wen, Y. Ma, G. Yu, G. P. Carman, X. Han, X. Zhang, K. L. Wang, "Magnetic memory driven by topological insulators", Nature Communications 12, 6251 (2021). 
75. T. Fan, N. H. D. Khang, T. Shirokura, H. H. Huy, P. N. Hai, “Low power spin–orbit torque switching in sputtered BiSb topological insulator/perpendicularly magnetized CoPt/MgO multilayers on oxidized Si substrate”, Appl. Phys. Lett. 119, 082403 (2021).
74. T. Shirokura, K. Fujiwara and P. N. Hai, “Spin Hall effect in amorphous YPt alloy”, Appl. Phys. Express 14, 043002 (2021).
73. M. Kobayashi, L. D. Anh, J. Minár, W. Khan, S. Borek, P. N. Hai, Y. Harada, Th. Schmitt, M. Oshima, A. Fujimori, M. Tanaka, V. N. Strocov, "Minority-spin impurity band in n-type (In,Fe)As: A materials perspective for ferromagnetic semiconductors", Phys. Rev. B 103, 115111 (2021).
72. N. H. D. Khang, P. N. Hai, “Spin–orbit torque as a method for field-free detection of in-plane magnetization switching”, Appl. Phys. Lett. 117, 252402 (2020).
71. Y. Takeda, S. Ohya, P. N. Hai, M. Kobayashi, Y. Saitoh, H. Yamagami, M. Tanaka, and A. Fujimori, "Direct observation of the magnetic ordering process in the ferromagnetic semiconductor Ga1−xMnxAs via soft x-ray magnetic circular dichroism", J. Appl. Phys. 128, 213902 (2020).
70. P.N. Hai, "Spin Hall Effect in Topological Insulators", J. Magn. Soc. Jpn. 44, 137-144 (2020).
69. N. H. D. Khang, S. Nakano, T. Shirokura, Y. Miyamoto, P. N. Hai, “Ultralow power spin–orbit torque magnetization switching induced by a non-epitaxial topological insulator on Si substrates”, Sci. Rep. 10, 12185 (2020).
68. P. N. Hai, M. Yoshida, A. Nagamine, and M. Tanaka, “Inhomogeneity-induced high temperature ferromagnetism in n-type ferromagnetic semiconductor (In,Fe)As grown on vicinal GaAs substrates”, Jpn. J. Appl. Phys. 59, 063002 (2020).
67. T. Fan, M. Tobah, T. Shirokura, N. H. D. Khang, and P. N. Hai. “Crystal growth and characterization of topological insulator BiSb thin films by sputtering deposition on sapphire substrates”, Jpn. J. Appl. Phys. 59, 063001 (2020).
66. T. Shirokura, P. N. Hai, “Bias-field-free spin Hall nano-oscillators with an out-of-plane precession mode”, J. Appl. Phys. 127, 103904 (2020).
65. K. Chonan, N. H. D. Khang, M. Tanaka, P. N. Hai, “Large magnetoresistance and spin-dependent output voltage in a lateral MnGa/GaAs/MnGa spin-valve device”, Jpn. J. Appl. Phys. 59, SGGI08 (2020).
64. S. Sakamoto, L. D. Anh, P. N. Hai, Y. Takeda, M. Kobayashi, Y. K. Wakabayashi, Y. Nonaka, K. Ikeda, Zh.D. Chi, Y.X. Wan, M. Suzuki, Y. Saitoh, H. Yamagami, M. Tanaka, and A. Fujimori, “Magnetization process of the insulating ferromagnetic semiconductor (Al,Fe)Sb”, Phys. Rev. B 101, 075204 (2020).
63. N. H. D. Khang and P. N. Hai, “Giant unidirectional spin Hall magnetoresistance in topological insulator – ferromagnetic semiconductor heterostructures”, J. Appl. Phys. 126, 233903 (2019).
62. N. H. D. Khang, T. Fan, and P. N. Hai, “Zero-field topological Hall effect as evidence of ground-state skyrmions at room temperature in BiSb/MnGa bilayers”, AIP Advances 9, 125309 (2019).
61. N. T. Tu, P. N. Hai, L. D. Anh, M. Tanaka, “Heavily Fe-doped ferromagnetic semiconductor (In,Fe)Sb with high Curie temperature and large magnetic anisotropy”, Appl. Phys. Express 12, 103004 (2019).
60. S. Sakamoto, N. T. Tu, Y. Takeda, S. Fujimori, P. N. Hai, L. D. Anh, Y. K. Wakabayashi, G. Shibata, M. Horio, K. Ikeda, Y. Saitoh, H. Yamagami, M. Tanaka, and A. Fujimori, “Electronic structure of the high-TC ferromagnetic semiconductor (Ga,Fe)Sb: X-ray magnetic circular dichroism and resonance photoemission spectroscopy studies”, Phys. Rev. B 100, 035204 (2019).
59. D. D. Hiep, M. Tanaka, P. N. Hai, “Lateral silicon spin-valve devices with large spin-dependent magnetoresistance and output voltage”, Adv. Nat. Sci: Nanosci. Nanotechnol. 10, 025001 (2019).
58. K. Nishijima, N. T. Tu, M. Tanaka, P. N. Hai, “Fe delta-doped (In,Fe)Sb ferromagnetic semiconductor thin films for magnetic-field sensors with ultrahigh Hall sensitivity”, J. Cryst. Growth 511, 127-131 (2019).
57. K. Yao, N. H. D. Khang, P. N. Hai, "Influence of crystal orientation and surface termination on the growth of BiSb thin films on GaAs substrates", J. Cryst. Growth 511, 99-105 (2019).
56. P. N. Hai, N. H. D. Khang, K. Yao, Y. Ueda. "Conductive BiSb topological insulator with colossal spin Hall effect for ultra-low power spin-orbit-torque switching", Proc. SPIE 10732, 107320U (2018).
55. N. H. D. Khang, Y. Ueda, P. N. Hai, “A conductive topological insulator with large spin Hall effect for ultralow power spin–orbit torque switching”, Nature Materials 17, 808–813 (2018).
54. D. D. Hiep, M. Tanaka, P. N. Hai, “Spin-valve Effect in Nanoscale Si-based Devices”, AAPPS Bulletin 28, 7-15 (2018).
53. N. T. Tu, P. N. Hai, L. D. Anh, and M. Tanaka, “High-temperature ferromagnetism in new n-type Fe-doped ferromagnetic semiconductor (In,Fe)Sb”, Appl. Phys. Express 11, 063005 (2018).
52. C. T. Bui, C. A. C. Garcia, N. T. Tu, M. Tanaka, and P. N. Hai, “Planar Nernst effect and Mott relation in (In,Fe)Sb ferromagnetic semiconductor”, J. Appl. Phys. 123, 175102 (2018).
51. N. T. Tu, P. N. Hai, L. D. Anh, M. Tanaka, ”Electrical control of ferromagnetism in the n-type ferromagnetic semiconductor (In,Fe)Sb with high Curie temperature”, Appl. Phys. Lett. 112, 122409 (2018)
50. L. D. Anh, P. N. Hai, M. Tanaka, “Electrical tuning of the band alignment and magnetoconductance in an n-type ferromagnetic semiconductor (In,Fe)As-based spin-Esaki diode”, Appl. Phys. Lett. 112, 102402 (2018).
49. D. D. Hiep, M. Tanaka and P. N. Hai, “Inverse spin-valve effect in nanoscale Si-based spin-valve devices”, J. Appl. Phys. 122, 223904 (2017).
48. N. H. D. Khang, Y. Ueda, K. Yao, and P. N. Hai, “Growth and characterization of MnGa thin films with perpendicular magnetic anisotropy on BiSb topological insulator”, J. Appl. Phys. 122, 143903 (2017).
47. Y. Ueda, N. H. D. Khang, K. Yao, and P. N. Hai, “Epitaxial growth and characterization of Bi1-xSbx spin Hall thin films on GaAs(111)A substrates”, Appl. Phys. Lett. 110, 062401 (2017).
46. L. D. Anh, P. N. Hai, M. Tanaka, “Observation of spontaneous spin-splitting in the band structure of an n-type zinc-blende ferromagnetic semiconductor”, Nature Communications 7, 13810 (2016)
45. D. D. Hiep, M. Tanaka, P. N. Hai, “Spin transport in nanoscale Si-based spin-valve devices”, Appl. Phys. Lett. 109, 232402 (2016).
44. N. T. Tu, P. N. Hai, L. D. Anh, M. Tanaka, “High-temperature ferromagnetism in heavily Fe-doped ferromagnetic semiconductor (Ga,Fe)Sb”, Appl. Phys. Lett. 108, 192401 (2016).
43. P. N. Hai, D. Maruo, L. D. Anh, and M. Tanaka, "Visible-light emission at room temperature in Mn-doped Si light-emitting diodes", Phys. Rev. B 93, 094423/1-6 (2016).
42. S. Sakamoto, L. D. Anh, P. N. Hai, G. Shibata, Y. Takeda, M. Kobayashi, Y. Takahashi, T. Koide, M. Tanaka, and A. Fujimori, “Magnetization process of the n-type ferromagnetic semiconductor (In,Fe)As:Be studied by x-ray magnetic circular dichroism”, Phys. Rev. B 93, 035203/1-6 (2016).
41. L. D. Anh, D. Kaneko, P. N. Hai, M. Tanaka, “Growth and characterization of insulating ferromagnetic semiconductor (Al,Fe)Sb”, Appl. Phys. Lett. 107, 232405/1-4 (2015).
40. T. Dietl, K. Sato, T. Fukushima, A. Bonanni, M. Jamet, A. Barski, S. Kuroda, M. Tanaka, Pham Nam Hai, H. Katayama-Yoshida, “Spinodal nanodecomposition in semiconductors doped with transition metals”, Rev. Mod. Phys. 87, 1311-1377 (2015).
39. L. D. Anh, P. N. Hai, Y. Kasahara, Y. Iwasa, Masaaki Tanaka, “Modulation of ferromagnetism in (In,Fe)As quantum wells via electrically controlled deformation of the electron wave functions”, Phys. Rev. B 92, 161201(R)/1-5 (2015).
38. N. T. Tu, P. N. Hai, L. D. Anh, M. Tanaka, “Magnetic properties and intrinsic ferromagnetism in (Ga,Fe)Sb ferromagnetic semiconductors”, Phys. Rev. B 92, 144403/1-14 (2015).
37. P. N. Hai, M. Tanaka, “Memristive magnetic tunnel Junctions with MnAs nanoparticles”, Appl. Phys. Lett. 107, 122404/1-5 (2015).
36. A. Ishikawa, T. Amemiya, Y. Shoji, P. N. Hai, M. Tanaka, T. Mizumoto, S. Arai, T. Tanaka, “Optical and Magnetic Microstructures in YIG Ferrite Fabricated by Femtosecond Laser”, Journal of Laser Micro/Nanoengineering 10, 48-52 (2015).
35. N. T. Tu, P. N. Hai, L. D. Anh, M. Tanaka, “(Ga,Fe)Sb: A p-type ferromagnetic semiconductor”, Appl. Phys. Lett. 105, 132402/1-4 (2014)
34. P. N. Hai, T. Yatsui, M. Ohtsu, and M. Tanaka, “High-field electroluminescence in semiconductor tunnel junctions with a Mn-doped GaAs layer ”, J. Appl. Phys. 116, 113905/1-6 (2014).
33. M. Kobayashi, L. D. Anh, P. N. Hai, Y. Takeda, S. Sakamoto, T. Kadono, T. Okane, Y. Saitoh, H. Yamagami, Y. Harada, M. Oshima, M. Tanaka and A. Fujimori, “Spin and orbital magnetic moments of Fe in the n-type ferromagnetic semiconductor (In,Fe)As”, Appl. Phys. Lett. 105, 032403/1-4 (2014).
32. D. Sasaki, L. D. Anh, P. N. Hai, M. Tanaka, “Interplay between strain, quantum confinement, and ferromagnetism in strained ferromagnetic semiconductor (In,Fe)As thin films”, Appl. Phys. Lett. 104, 142406/1-5 (2014).
31. P. N. Hai, D. Maruo, M. Tanaka, “Visible-light electroluminescence in Mn-doped GaAs light-emitting diodes”, Appl. Phys. Lett. 104, 122409/1-5 (2014).
30. M. Kobayashi, H. Niwa, Y. Takeda, A. Fujimori, Y. Senba, H. Ohashi, A. Tanaka, S. Ohya, P. N. Hai, M. Tanaka, Y. Harada, and M. Oshima, “Electronic Excitations of a Magnetic Impurity State in the Diluted Magnetic Semiconductor (Ga,Mn)As”, Phys. Rev. Lett. 112, 107203/1-5 (2014).
29. N. T. Tu, L. D. Anh, P. N. Hai, M. Tanaka, “Epitaxial growth and characterization of n-type magnetic semiconductor (In,Co)As”, Jpn. J. Appl. Phys. 53, 04EM05/1-5 (2014).
28. L. D. Anh, P. N. Hai, M. Tanaka, “Control of ferromagnetism by manipulating the carrier wavefunction in ferromagnetic semiconductor (In,Fe)As quantum wells”, Appl. Phys. Lett. 104, 042404/1-5 (2014).
27. T. Amemiya, A. Ishikawa, Y. Shoji, P. N. Hai, M. Tanaka, T. Mizumoto, T. Tanaka, and S. Arai, “Three-dimensional nanostructuring in YIG ferrite with femtosecond laser”, Opt. Lett. 39, 212-215 (2014).
26. M. Tanaka, S. Ohya, P. N. Hai (invited review paper), “Recent Progress in III-V based ferromagnetic semiconductors: Band structure, Fermi level, and tunneling transport”, Appl. Phys. Rev. 1, 011102/1-25 (2014).
25. P. N. Hai, L. D. Anh, M. Tanaka, “Electron effective mass in n-type electron-induced ferromagnetic semiconductor (In,Fe)As: Evidence of conduction band transport”, Appl. Phys. Lett. 101, 252410/1-5 (2012).
24. P. N. Hai, W. Nomura, T. Yatsui, M. Ohtsu, M. Tanaka, “Effects of laser irradiation on the self-assembly of MnAs nanoparticles in a GaAs matrix”, Appl. Phys. Lett. 101, 193102/1-4 (2012).
23. P. N. Hai, L. D. Anh, S. Mohan, T. Tamegai, M. Kodzuka, T. Ohkubo, K. Hono, M. Tanaka, “Growth and characterization of n-type electron-induced ferromagnetic semiconductor (In,Fe)As”, Appl. Phys. Lett. 101, 182403/1-5 (2012).
22. P. N. Hai, D. Sasaki, L. D. Anh, M. Tanaka, “Crystalline anisotropic magnetoresistance with two-fold and eight-fold symmetry in (In,Fe)As ferromagnetic semiconductor”, Appl. Phys. Lett. 100, 262409/1-5 (2012).
21. R. Akiyama, S. Ohya, P. N. Hai, and M. Tanaka, “Magnetoresistance enhanced by inelastic cotunneling in a ferromagnetic MnAs nanoparticle sandwiched by nonmagnetic electrodes”, J. Appl. Phys. 111, 063716/1-5 (2012).
20. S. Yada, P. N. Hai, S. Sugahara, M. Tanaka, “Structural and magnetic properties of Ge1-xMnx thin films grown on Ge (001) substrates”, J. Appl. Phys. 110, 073903/1-8 (2011).
19. P. N. Hai, S. Yada and M. Tanaka, “Phase decomposition diagram of magnetic alloy semiconductor”, J. Appl. Phys. 109, 073919/1-9 (2011).
18. P. N. Hai, S. Ohya and M. Tanaka, “Long spin-relaxation time in a single metal nanoparticle”, Nature Nanotech. 5, 593-596 (2010).
17. S. Ohya, I. Muneta, P. N. Hai, and M. Tanaka, “Valence-band structure of the ferromagnetic semiconductor GaMnAs studied by spin-dependent resonant tunneling spectroscopy”, Phys. Rev. Lett. 104, 167204/1-4 (2010).
16. S. Ohya, I. Muneta, P. N. Hai, and M. Tanaka, “GaMnAs-based magnetic tunnel junctions with an AlMnAs barrier”, Appl. Phys. Lett. 95, 242503/1-3 (2009).
15. P. N. Hai, S. Ohya, M. Tanaka, S. E. Barnes, and S. Maekawa, “Electromotive force and huge magnetoresistance in magnetic tunnel junctions”, Nature 458, 489-492 (2009).
14. P. N. Hai, Y. Sakata, M. Yokoyama, S. Ohya and M. Tanaka, “Spin-valve effect by ballistic transport in ferromagnetic metal (MnAs)/semiconductor (GaAs) hybrid heterostructures”, Phys. Rev. B 77, 214435/1-6 (2008).
13. Y. Takeda, M. Kobayashi, T. Okane, T. Ohkochi, J. Okamoto, Y. Saitoh, K. Kobayashi, H. Yamagami, A. Fujimori, A. Tanaka, J. Okabayashi, M. Oshima, S. Ohya, P. N. Hai and M. Tanaka, “Nature of Magnetic Coupling between Mn Ions in As-Grown Ga1-xMnxAs Studied by X-Ray Magnetic Circular Dichroism”, Phys. Rev. Lett. 100, 247202/1-4 (2008).
12. P. N. Hai, S. Sugahara, M. Tanaka, “Reconfigurable Logic Gates Using Single-Electron Spin Transistors”, Jpn. J. Appl. Phys. 46, 6579-6585 (2007).
11. S. Ohya, P. N. Hai, Y. Mizuno and M. Tanaka, “Quantum size effect and tunneling magnetoresistance in ferromagnetic-semiconductor quantum heterostructures”, Phys. Rev. B 75, 155328/1-6 (2007).
10. Y. Mizuno, S. Ohya, P. N. Hai and M. Tanaka, “Spin-dependent transport properties in GaMnAs-based spin hot-carrier transistors”, Appl. Phys. Lett. 90, 162505/1-3 (2007).
9. T. Amemiya, H. Shimizu, Y. Nakano, M. Yokoyama, P. N. Hai and M. Tanaka, “1.5-μm TM-mode waveguide optical isolators based on the nonreciprocal-loss phenomenon; theory and experiments”, Appl. Opt. 46, 5784-5791 (2007).
8. T. Amemiya, H. Shimizu, P. N. Hai, M. Tanaka and Y. Nakano. “Non-reciprocal propagation of light without external magnetic fields in a semiconductor waveguide isolator with a MnAs layer”, J. Magn. Magn. Mat. 310, 2161-2163 (2007).
7. P. N. Hai, K. Takahashi, M. Yokoyama, S. Ohya, M. Tanaka, “Magnetic properties of MnAs nanoclusters embedded in a GaAs semiconductor matrix”, J. Magn. Magn. Mat. 310, 1932-1934 (2007).
6. T. Amemiya, H. Shimizu, P. N. Hai, M. Yokoyama, M. Tanaka and Y. Nakano, “Waveguide-Based 1.5-μm Optical Isolator Based on Magneto-Optic Effect in Ferromagnetic MnAs”, Jpn. J. Appl. Phys. 46, 205-210 (2007).
5. S. Ohya, P. N. Hai, Y. Mizuno and M. Tanaka, “Resonant tunneling effect and tunneling magnetoresistance in GaMnAs quantum-well double-barrier heterostructures”, Phys. Stat. Sol. (c) 3, 4184-4187 (2006).
4. P. N. Hai, M. Yokoyama, S. Ohya and M. Tanaka, “Tunneling magneto resistance of MnAs thin film / GaAs / AlAs / GaAs:MnAs nanoclusters and its AlAs barrier thickness dependence”, Appl. Phys. Lett. 89, 242106/1-3 (2006).
3. T. Amemiya, H. Shimizu, Y. Nakano, P. N. Hai, M. Yokoyama and M. Tanaka,“Semiconductor waveguide optical isolator based on nonreciprocal loss induced by ferromagnetic MnAs”, Appl. Phys. Lett. 89, 021104/1-3 (2006).
2. P. N. Hai, M. Yokoyama, S. Ohya and M. Tanaka, “Spin polarized tunneling in III-V based heterostructures with a ferromagnetic MnAs thin film and GaAs:MnAs nanoclusters”, Physica E 32, 416-418 (2006).
1. S. Ohya, P. N. Hai, and M. Tanaka, “Tunneling magnetoresistance in GaMnAs / AlAs / InGaAs / AlAs / GaMnAs double-barrier magnetic tunneling junctions”, Appl. Phys. Lett. 87, 012105/1-3 (2005).

 

■　解説・著書

8. Pham Nam Hai, "トポロジカル絶縁体", スピントロニクスハンドブック, 第14章 第4節, 2023年5月23日発刊, (株)エヌ・ティー・エス.
7. レデゥックアイン, グエンタントゥ, 瀧口耕介, 小林正起, ファムナムハイ, 田中雅明, "強磁性半導体ルネサンス －Fe添加III-V族強磁性半導体がもたらす新展開－", 固体物理, Vol. 58, No. 2, p. 67-80, Feb. 2023.
6. Nguyen Huynh Duy Khang, Pham Nam Hai. "Giant spin-dependent phenomena in BiSb topological insulator - ferromagnet heterostructures", Science and Technology in Japan, Vol. 1, pp. 45, Sept. 2021. DOI: 10.15625/vap.2021.0006
5. Pham Nam Hai. "トポロジカル絶縁体スピントロニクス", 応用電子物性分科会会誌, Vol. 25, No. 5, pp. 173-178, Dec. 2019.
4. Pham Nam Hai. "III-V and Group-IV-Based Ferromagnetic Semiconductors for Spintronics", Book Chapter in Comprehensive Nanoscience and Nanotechnology 2nd edition, Elsevier, Volume 1, pp. 141-170, Jan. 2019. DOI:10.1016/B978-0-12-803581-8.10451-5
3. ファム ナム ハイ, レ デゥック アイン, グエン タン トゥ, 田中 雅明. "鉄系強磁性半導体の創製とデバイス応用", 応用物理, 第87巻, 第10号, pp.754-758, Oct. 2018
2. ファム ナム ハイ, "Inside Out: ベトナム人留学生たちの活躍、過去、現在と未来", 応用物理, 第85巻, 第3号, pp.234-235, Dec. 2015.
1. Masaaki Tanaka, Masafumi Yokoyama, Pham Nam Hai, Shinobu Ohya. "Properties and Functionalities of MnAs/III–V Hybrid and Composite Structures", Book chapter in Spintronics, Semiconductors and Semimetals series, Elsevier, Vol. 82, pp. 455-485, Nov. 2008.

 

■　国際学会、国内学会の招待講演

93. (Invited) Pham Nam Hai. "Topological materials for advanced magnetic memory and sensor", The 5th International Symposium on Advanced Magnetic Materials and Applications (ISAMMA2024), Quang Binh, Vietnam, August 5th. 2024.
92. (Keynote) Masaaki Tanaka, Kosuke Takiguchi, Nguyen Thanh Tu, Le Duc Anh, Pham Nam Hai, "A new class of Fe-doped III-V ferromagnetic semiconductors with high Curie temperatures and their quantum heterostructures", The 5th International Symposium on Advanced Magnetic Materials and Applications (ISAMMA2024), Quang Binh, Vietnam, August 5th. 2024.
91. (Invited) Masaaki Tanaka, Kosuke Takiguchi, Nguyen Thanh Tu, Le Duc Anh, Pham Nam Hai, "A new class of Fe-doped III-V ferromagnetic semiconductors with high Curie temperature and their quantum heterostructures", 36th International Conference on the Physics of Semiconductors (ICPS), Ottawa, Canada, August 1st, 2024.
90. (Invited) Pham Nam Hai. "Topological materials for advanced spintronic devices", VANJ Conference 2023, Tokyo, Japan, December 2nd. 2023.
89. (Invited) Takanori Shirokura, Pham Nam Hai, "Giant spin Hall effect in back-end-of-line compatible topological semimetal YPtBi", The 4th International Workshop on Advanced Materials and Devices 2023 (IWAMD 2023), Thai Nguyen, Vietnam, August 11th, 2023.
88. (Invited) Pham Nam Hai, "Room-temperature spintronics using ferromagnetic semiconductor and topological insulator", EU-Japan Workshop on Spintronics and Quantum Transformation (Spin-QX 2023), Forschungszentrum Jülich, Germany, August 8th, 2023.
87. (Invited) B.R. York, Q. Le, X. Liu, S. Okamura, C. Hwang, M.A. Gribelyuk, S. Le, J. Liu, R. Simmons, M. Maeda, F. Tuo, Y. Tao, J. Ohno, H. Takano, P.N. Hai, H. H. Huy, S. Namba, "High Thermal Reliability and High Spin Hall Angle Observed in SOT-Reader Thin Films Using BiSbX Topological Insulators", TMRC2023, Minnesota, USA, July 31th, 2023.
86. (Invited) 白倉 孝典, 脱 凡, グエン フン ユイ カン, ファム ナム ハイ, "ハーフホイスラー型トポロジカル半金属を用いた配線工程耐性を有する超高効率純スピン流源の開発", 第70回応用物理学会春季学術講演会, 上智大学, 2023年3月16日.
85. (Invited) P. N. Hai, “スピンホール効果を用いた読み取り磁気ヘッド素子の基礎と応用”, 物質・材料研究機構、磁性・スピントロニクス材料研究拠点セミナー, Nov. 17 (2022).
84. (Invited) P. N. Hai, “Topological insulator for ultralow power SOT devices”, 1st MRAM Material Symposiums, SamSung Electronics, Hwaseong, Korea, Sep. 22 (2022).
83. (Invited) P. N. Hai, “Topological insulator with giant spin Hall-related phenomena for spintronic applications”, VJSE 2022, Japan, Sep. 17 (2022).
82. (Invited) P. N. Hai, “Topological Materials with Giant Spin Hall Effect and Their Applications to Magnetic Memories”, Emerging Memory and Computer Seminar Series, Nanyang Technological University, Singapore, Sep. 1 (2022).
81. (Invited) P. N. Hai, N. H. D. Khang, T. Fan, T. Shirokura, Y. Miyamoto, “Giant spin dependent transport phenomena in topological insulator – ferromagnet multilayers”, APPC15, Korea, Aug. 21-26 (2022).
80. (Invited) P. N. Hai, "Topological materials for ultralow power spintronic devices", Symposium on Topotronics for the Metaverse, Tokyo, Japan, Aug. 9 (2022).
79. (Keynote) M. Tanaka, L. D. Anh, K. Takiguchi, S. Goel, S. Ohya, N. T. Tu, P. N. Hai, "New ferromagnetic semiconductors and spintronics applications", The VANJ Conference 2020 (VANJ20), Nov. 28-29 (2020).
78. (Invited) P. N. Hai, N. H. D. Khang, T. Fan, Y. Ueda, Y. Miyamoto, "Topological Insulator Spintronics", The VANJ Conference 2020 (VANJ20), Nov. 28-29 (2020).
77. (Invited) M. Tanaka, L. D. Anh, K. Takiguchi, S. Goel, S. Ohya, N. T. Tu, and P. N. Hai, “New ferromagnetic semiconductors and spintronics applications: Fe-doped narrow-gap III-V ferromagnetic semiconductors and heterostructures with high Curie temperature", 39th Electronic Materials Symposium EMS-39 (online), Oct. 7-9 (2020).
76. (Invited) Le Duc Anh, Nguyen Thanh Tu, 瀧口耕介, Pham Nam Hai, 田中雅明, “n型およびp型Fe系強磁性半導体 －高いキュリー温度の実現とヘテロ構造デバイスへの展開－”, 日本磁気学会第76回スピントロニクス専門研究会 (online), 2020年9月25日.
75. (Invited) Nguyen Huynh Duy Khang, Tuo Fan, Pham Nam Hai, “Giant spin-related transport phenomena in BiSb topological insulator/ferromagnet bilayers”, SPIE Spintronics XIII, (online) California, USA, Aug 24-28 (2020).
74. (Invited) Pham Nam Hai, Nguyen Huynh Duy Khang, Yasuyoshi Miyamoto, “Giant spin Hall effect in BiSb topological insulator”, The 2nd Kavli ITS Workshop on Magnetic Semiconductors, Beijing, China, Jan 15-16 (2020).
73. (Invited) Masaaki Tanaka, Le Duc Anh, Kosuke Takiguchi, Shobhit Goel, Shinobu Ohya, Nguyen Thanh Tu, and Pham Nam Hai, “Fe-doped narrow-gap III-V ferromagnetic semiconductors and related heterostructures with high Curie temperature”, The 2nd Kavli ITS Workshop on Magnetic Semiconductors, Beijing, China, Jan 15-16 (2020).
72. (Invited) Pham Nam Hai, “トポロジカル絶縁体スピントロニクス”, 応用物理学会 応用電子物性分科会 研究例会-スピントロニクスの最前線-, 2019年12月16日、首都大学東京.
71. (Invited) P. N. Hai, N. H. D. Khang, “Giant spin Hall effect in topological insualor”, 11th International Conference on Advanced Materials and Devices (ICAMD 2019), Jeju, Korea, Dec. 10-13 (2019).
70. (Invited) M. Tanaka, L. D. Anh, N. T. Tu, P. N. Hai, “New Fe-doped III-V ferromagnetic semiconductors and their heterostructures”, 11th International Conference on Advanced Materials and Devices (ICAMD 2019), Jeju, Korea, Dec. 10-13 (2019).
69. (Invited) K. Takiguchi, L. D. Anh, N. T. Tu, P. N. Hai, and M. Tanaka, “High-Curie-temperature n-type and p-type Fe-doped III-V ferromagnetic semiconductors and
heterostructures – Giant proximity magnetoresistance and control by gate voltage”, CSRN-Tokyo Workshop 2019, Tokyo, Nov. 22-23 (2019).
68. (Invited) N. H. D. Khang, Y. Ueda, K. Yao, Y. Miyamoto, P. N. Hai, “Giant spin related phenomena in BiSb topological insulator/ferromagnet heterostructures”, CSRN-Tokyo Workshop 2019, Tokyo, Nov. 22-23 (2019).
67. (Invited) P. N. Hai, N. H. D. Khang, T. Shirokura, K. Yao, “Giant spin-orbit torque generated by BiSb topological insulator”, The 43th Annual Conference on Magnetics in Japan, Kyoto, Sep. 25-27 (2019).
66. (Invited) Anh Le Duc, Nguyen Thanh Tu, 瀧口 耕介, ファム ナムハイ, 田中 雅明, “ｎ型およびｐ型Fe系強磁性半導体 ー 高いキュリー温度の実現とヘテロ構造デバイスへの展開”, 第80回応用物理学会秋季学術講演会, 北海道大学, 2019年9月18日-21日.
65. (Invited) P. N. Hai, N. H. D. Khang, T. Shirokura, K. Yao, “トポロジカル絶縁体・磁性体ヘテロ接合 における巨大なスピン軌道トルクとその起源”, 第80回応用物理学会秋季学術講演会, 北海道大学, 2019年9月18日-21日.
64. (Invited) Pham Nam Hai, “トポロジカル絶縁体・磁性体接合におけるスピンホール関連現象”, 強的秩序とその操作に関わる研究グループ 第9回 研究会 ー夏の学校ー, 北海道, 2019年9月16日-17日.
63. (Invited) M. Tanaka, L. D. Anh, N. T. Tu, P. N. Hai, “Fe-doped III-V ferromagnetic semiconductors and heterostructures”, SPIE Spintronics XII, San Diego, USA, Aug. 11-15 (2019).
62. (Invited) P. N. Hai, T. Shirokura, K. Yao, “Origin of the giant spin-orbit-torque generated by BiSb topological insulator”, SPIE Spintronics XII, San Diego, USA, Aug. 11-15 (2019).
61. (Invited) P. N. Hai, N. H. D. Khang, T. Shirokura, K. Yao, “Giant Spin-orbit torque Generated by BiSb Topological Insulator for MRAM Applications", 11th International Conference on Magnetic and Superconducting Materials, Seoul, Korea, Aug. 17-24 (2019).
60. (Invited) P. N. Hai, N. H. D. Khang, T. Shirokura, K. Yao, Y. Ueda, “Giant spin-orbit torque generated by BiSb topological insulator for high-performance spintronic devices”, International Workshop on New Trends in Topological Insulators 2019 & Variety and Universality of Bulk-edge Correspondence in Topological Phases (NTTI2019 and BEC 2019), Hiroshima, Jul. 15-19 (2019).
59. (Invited) L. D. Anh, N. T. Tu, P. N. Hai, M. Tanaka , “Fe-Based Narrow-gap ferromagnetic semiconductors: new approach to spin-based electronics”, Vietnam- Japan Science and Technology Symposium 2019, Ha Noi, Vietnam, May 4 (2019).
58. (Keynote) P. N. Hai, N.H. D. Khang. T. Shirokura, K. Yao, Y. Ueda, “Spin Hall effect in topological insulators: from fundamental researches to spintronic device applications”, Vietnam- Japan Science and Technology Symposium 2019, Ha Noi, Vietnam, May 4 (2019).
57. (Invited) P. N. Hai, “Topological insulator for ultralow power SOT-MRAM”, International School on Spintronics and Korea-Japan Spintronics Workshop – Topological Phenomena in Magnetism -, Nagoya, Jan. 21-22 (2019).
56. (Invited) L. D. Anh, N. T. Tu, P. N. Hai, M. Tanaka, “High Curie temperature and electrical control of magnetic properties in Fe-based narrow-gap III-V ferromagnetic semiconductor heterostructures”, 2019 Joint MMM-Intermagn, Washington DC, USA, Jan. 14-18 (2019).
55. (Invited) Hai Pham, “Giant spin Hall effect in BiSb topological insulator”, The 50th Reimei workshop: Universal Physics in Many-Body Quantum Systems — From Atoms to Quarks –, Ibaraghi Quantum Beam Reseearch Center, Tokai, Ibaraki, Dec 12-14 (2018).
54. (Invited) P. N. Hai, N. H. D. Khang, K. Yao, T. Shirokura, "Topological insulator for ultra-low power magnetic memories", PASPS-23, Kanazawa, Dec. 6-7 (2018).
53. (Invited), N. T. Tu, P. N. Hai, L. D. Anh, M. Tanaka, "High-temperature ferromagnetism in both p-type and n-type Fe-doped III-V ferromagnetic semiconductors", PASPS-23, Kanazawa, Dec. 6-7 (2018).
52. (Invited) P. N. Hai, N. H. D. Khang, 八尾 健一郎, 白倉 孝典, "超高性能純スピン注入源としての BiSb トポロジカル絶縁体”, ISSPワークショップ「スピン軌道強結合伝導系におけるサイエンスの新展開」, 東京大学物性研究所 11月12日(2018).
51. (Invited) M. Tanaka, L. D. Anh, N. T. Tu, and P. N. Hai, "New n-type and p-type Fe-doped III-V ferromagnetic semiconductors with high TC", The Kavli ITS Workshop on Diluted Magnetic Semiconductors: Challenges and Opportunities, UCAS KITS, Beijing, China, Nov. 4-5 (2018).
50. (Invited) P. N. Hai, K. Nishijima, T. Ostuka, N. T. Tu, L. D. Anh, M. Tanaka, "Spin-dependent transport phenomena in Fe-doped ferromagnetic semiconductor-based spin devices", The Kavli ITS Workshop on Diluted Magnetic Semiconductors: Challenges and Opportunities, UCAS KITS, Beijing, China, Nov. 4-5 (2018).
49. (Invited) N. H. D. Khang, Y. Ueda, P. N. Hai. "Colossal spin Hall effect in a conductive topological insulator Bi0.9Sb0.1 for ultra-low-power spin-orbit-torque switching", The 11th Vietnam-Japan Scientific Exchange Meeting, Sendai, Japan, Sep. 15 (2018).
48. (Invited) M. Tanaka, L. D. Anh, N. T. Tu, P. N. Hai, "New n-type and p-type ferromagnetic semiconductors with high TC", 20th International Conference on Molecular Beam Epitaxy (ICMBE 2018), Shanghai, China, Sep. 2-7 (2018).
47. (Invited) P. N. Hai, N. H. D. Khang, K. Yao, Y. Ueda, "Conductive BiSb topological insulator with colossal spin Hall effect for ultra-low power spin-orbit-torque switching", SPIE Spintronics XI, San Diego, USA, Aug. 19-23, (2018).
46. (Invited) D. A. Le, N. T. Tu, P. N. Hai, M. Tanaka, "Fe-based n-type and p-type narrow-gap III-V ferromagnetic semiconductors with high Curie temperatures", SPIE Spintronics XI, San Diego, USA, Aug. 19-23, (2018).
45. (Invited) M. Tanaka, S. Ohya, L.D. Anh, N.T. Tu, I. Muneta, and P.N. Hai, "Recent progress and topics in semiconductor spintronics and ferromagnetic semiconductors", Junjirou Kanamori Memorial International Symposium – New Horizon of Magnetism-, Tokyo, Japan, Sep. 27-29 (2017).
44. (Invited) Pham Nam Hai, Tomohiro Ostuka, Munehiko Yoshida, Nguyen Thanh Tu, Le Duc Anh, and Masaaki Tanaka, "Fe-doped ferromagnetic semiconductors for high-performance semiconductor spin devices", The 29th International Conference on Defects in Semiconductors(ICDS-29), Matsue, Japan, July 31 - August 4 (2017).
43. (Invited) P. N. Hai, L. D. Anh, N. T. Tu, M. Tanaka. "High-performance Fe-doped ferromagnetic semiconductors", International Workshop on Advanced Materials and Nanotechnology 2016 (IWAMN 2016), Hanoi, Vietnam, Nov. 3-5 (2016).
42. (Invited) L. D. Anh, P. N. Hai, Y. Kasahara, Y. Iwasa, M. Tanaka. "N-type carrier-induced ferromagnetic semiconductor and electrical control of ferromagnetism by wavefunction engineering", 61st Annual Conference on Magnetism and Magnetic Materials, New Orleans, Louisiana, USA, Oct. 31- Nov. 10, 2016.
42. (Invited) M. Tanaka, L. Duc Anh, P. Nam Hai, "Epitaxial Ferromagnetic Semiconductor Heterostructures: Control of Ferromagnetism by Wavefunction Engineering", The 18th International Conference on Crystal Growth and Epitaxy (ICCGE-18), Nagoya, Japan, August 7-12 (2016).
41. (Invited) Masaaki Tanaka, Pham Nam Hai, and Le Duc Anh, "Continuous visible-light emission at room temperature in Mn-doped GaAs and Si light-emitting diodes", SPIE Nano Science + Engineering, Spintronics Symposium, San Diego, August 9-13, 2015.
40. (Invited) Le Duc Anh, Pham Nam Hai, Yuichi Kasahara, Yoshihiro Iwasa, Masaaki Tanaka, “Control of magnetic properties by manipulating the carrier wavefunction in n-type ferromagnetic semiconductor (In,Fe)As quantum wells”, Vietnamese-Japanese Students' Scientific Exchange Meeting 2015, Kyoto University, Kyoto, Japan, October 31 (2015).
39. (Invited) Le Duc Anh, Pham Nam Hai, Yuichi Kasahara, Yoshihiro Iwasa, and Masaaki Tanaka, "Electrical control of magnetic properties in n-type ferromagnetic semiconductor (In,Fe)As quantum wells", EMN Istanbul Meeting, Istanbul, Turkey, July 1-4 (2015).
38. (Invited) Masaaki Tanaka, Le Duc Anh, Pham Nam Hai, "Ferromagnetic semiconductors and heterostructures for semiconductor spintronics: New n-type electron-induced ferromagnetic semiconductor and its quantum wells", Energy, Material, Nanotechnology Meeting 2015, Cancun, Mexico, June 8-11, 2015.
37. (Invited) Duc Anh Le, Nam Hai Pham, Yuichi Kasahara, Yoshihiro Iwasa, Masaaki Tanaka, [講演奨励賞記念講演] “Electrical modulation of ferromagnetism via controlling the wavefunction in n-type ferromagnetic semiconductor (In,Fe)As quantum wells”, 第62回応用物理学会春季学術講演会, 東海大学, 2015年3月11日～14日.
36. (Invited) P. N. Hai, “鉄系強磁性半導体とそのヘテロ構造”, 第19回 半導体スピン工学の基礎と応用 PASPS-19, 東京大学, 2014年12月15日～16日.
35. (Invited) P. N. Hai，D. Maruo，L. D. Anh，M. Tanaka, “Room temperature visible-light electroluminescence in Mn doped semiconductors”, The 75th JSAP Autumn Meeting 2014, Hokkaido, Sep. 18 (2014).
34. (Invited) Atsushi Ishikawa, Tomohiro Amemiya, Yuya Shoji, P. N. Hai, Masaaki Tanaka, Tetsuya Mizumoto, Shigehisa Arai, Takuo Tanaka. “Optical and magnetic microstructures in YIG ferrite fabricated by femtosecond laser”, The 15th Int’l Symposium on Laser Precision Microfabrication (LPM 2014), Jun. 2014.
33. (Invited) M. Tanaka, P. N. Hai, S. Ohya, “Continuous visible-light emission at room temperature in Mn-doped Si light-emitting diodes”, 2nd International Conference and Exhibition on Lasers, Optics & Photonics, Philadelphia, USA, September 8-10, 2014.
32. (Invited) M. Tanaka, P. N. Hai, and L.D. Anh, “Recent progress in III-V based ferromagnetic semiconductors: N-type (In,Fe)As and its heterostructures”, SPIE Nano Science + Engineering, Spintronics Symposium, San Diego, 17-21, August 2014.
31. (Invited) P. N. Hai, L. D. Anh, D. Sasaki, M. Tanaka, “Electron-induced ferromagnetism in Fe-doped narrow-gap semiconductors”, 15th International Union of Materials Research Societies, International Conference in Asia (IUMRS-ICA 2014), Fukuoka, Japan 24-30 August, 2014.
30. (Invited) M. Tanaka, P. N. Hai, and S. Ohya, “Recent Progress in Ferromagnetic Semiconductors”, 6th Indo-Japan Seminar ‘Physics and Design of Multi-Functional Correlated Materials’, 東京大学, 2014年3月24日.
29. (Invited) P. N. Hai, L. D. Anh, D. Sasaki, M. Tanaka, “Electron-induced ferromagnetism in Fe-doped semiconductors”; 固体エレクトロニク・光エレクトロニク研究会；東京大学, 2014年3月12日.
28. (Invited) P. N. Hai, M. Tanaka, “Spin-dependent transport phenomena in III-V semiconductor heterostructures with ferromagnetic MnAs nano-scale particles”, Vietnamese-Japanese Students’ Scientific exchange meeting 2013, Osaka, Sep 23, 2013.
27. (Invited) P. N. Hai; 東北大通研共同プロジェクト・組織連携型「スピントロニクス国際連携」秋特別講演会; “Ｎ型電子誘起強磁性半導体(In,Fe)As ~次世代強磁性半導体の開発に向けて~”; ラフォーレ蔵王（宮城県刈田郡蔵王町）, 2013年10月17-19日.
26. (Invited) M. Tanaka, Pham Nam Hai, Le Duc Anh, Daisuke Sasaki, “Recent progress of ferromagnetic semiconductors N-type electron-induced ferromagnetic semiconductor (In,Fe)As”, International Conference and Exhibition on Lasers, Optics & Photonics (Optics 2013), San Antonio,TX, USA, Oct, 7, 2013.
25. (Invited) M. Tanaka, P. N. Hai, L. D. Anh, S. Ohya, “Recent progress of ferromagnetic semiconductors: Electron-induced n-type ferromagnetic semiconductor (In,Fe)As”, The 16th International Symposium on the Physics of Semiconductors and Applications (ISPSA-XVI), Jeju, Korea,July 3, 2013.
24. (Invited) M. Tanaka, S. Ohya, P. N. Hai, R. Nakane, “Spintronics materials and devices – ferromagnetic semiconductors and hetero structures”, 2012 Conference on Optoelectronic and Microelectronic Materials & Devices (COMMAD), Melbourne, Australia, Dec 12-14, 2012.
23. (Invited) S. Ohya, I. Muneta, K. Takata, Y. Xin, P. N. Hai, and M. Tanaka, “Spin-dependent resonant tunneling and the valence-band picture of III-V-based ferromagnetic semiconductors”, 17th International Conference on Molecular Beam Epitaxy, Nara, September 23-28, 2012.
22. (Invited) M. Tanaka, P. N. Hai, L. D. Anh, “Iron-Based n-Type Electron-Induced Ferromagnetic Semiconductor”, International Conference on Superconductivity and Magnetism (ICSM 2012), Istanbul, Turkey, April 29 – May 4, 2012.
21. (Invited) P. N. Hai, L. D. Anh, D. Sakaki, M. Tanaka, “N-type electron-induced ferromagnetic semiconductor (In,Fe)As”, Nature Conference “Frontiers in Electronic Materials”, Aachen, Germany, June 17-20, 2012.
20. (Invited) M. Tanaka, P. N. Hai, and L. D. Anh, “A new Fe-based n-type electron-induced ferromagnetic semiconductor:(In,Fe)As”, 2nd International Workshop on Magnetic Materials and Nanostructures, Tokai, Japan, January 10-13, 2012.
19. (Invited) Pham Nam Hai and Masaaki Tanaka, 3rd International Workshop on Nanotechnology and application (IWNA 2011), “Top-down and bottom-up fabrication of nano-scale spintronic devices and their spin-dependent transport characteristics”, Vietnam National University, Ho Chi Minh City, Vietnam, November 10-12, 2011.
18. (Invited) S. Ohya, I. Muneta, K. Takata, Y. Xin, P. N. Hai, and M. Tanaka, Joint Polish-Japanese Workshop “Spintronics – from new materials to applications”, “Valence-band structure of (III,Mn)As ferromagnetic semiconductors”, Warsaw, Poland, 15-18 November 2011.
17. (Invited) S. Ohya, K. Takata, I. Muneta, P. N. Hai, Y. Xin, M. Tanaka; 5th International Workshop on Spin Currents; AP-6; “Valence-band structure of the ferromagnetic semiconductor GaMnAs”, Sendai, Miyaghi, Japan, July 25 – 28, 2011.
16. (Invited) Masaaki Tanaka, Pham Nam Hai, Iriya Muneta, and Shinobu Ohya, Sweden-Japan Workshop on Quantum Nanoelectronics (QNANO 2011), “III-V based magnetic heterostructures and nanostructures: Bandstructure, spin dependent tunneling, and magnetoresistance”, Visby, Sweden,June 12-14, 2011.
15. (Invited) P. N. Hai, 日本原子力研究機構　先端基礎研究センターセミナー; “Iron-based n-type electron induced ferromagnetic semiconductor”; 2011年6月16日.
14. (Invited) Shinobu Ohya, Iriya Muneta, Kenta Takata, Pham Nam Hai, and Masaaki Tanaka, “Resonant tunneling spectroscopy and valence-band picture of the ferromagnetic semiconductor GaMnAs”, International Magnetics Conference 2011 (Intermag 2011), Taipei, April 25-29, 2011.
13. (Invited) P. N. Hai, 日本原子力研究機構　先端基礎研究センターセミナー; “閃亜鉛鉱型MnAs磁性微粒子による起電力の発生”; 2010年8月5日.
12. (Invited) P. N. Hai and M. Tanaka; Solid State Systems Symposium (4S-2010); 4S-2010-I6; “Emerging semiconductor spintronic devices and materials”; Hochiminh city, Vietnam, June 17-18, 2010.
11. (Invited) P. N. Hai, R. Akiyama, S. Ohya and M. Tanaka; The 37th International Symposium on Compound Semiconductors; TuD3-1; “Electro motive force and huge magnetoresistance induced by zinc-blende MnAs nanomagnets”; Takamatsu, Kagawa, Japan, May 31-June 4, 2010.
10. (Invited) 大矢 忍，宗田伊理也，ファム ナム ハイ，高田健太，田中雅明; 2010年春季第57回応用物理学関係連合講演会のシンポジウム「スピントロニクスデバイスの新展開」；18p-ZJ-8；“強磁性半導体GaMnAsへテロ構造におけるスピン依存伝導”；東海大学, 2010年3月17日.
9. (Invited) P. N. Hai, 2010 APS Annual March Meeting; L36.00010; “Electromotive force and huge magnetoresistance in magnetic tunnel junctions with zinc-blende MnAs nano-magnets”; Portland, Oregon, USA, March 15-19, 2010.
8. (Invited) ファム　ナム　ハイ，大矢 忍，田中 雅明; 第14回半導体スピン工学の基礎と応用(The 14 Symposium on the Physics and Application of Spin-Related Phenonmena in Semiconductors; PASPS-14); E7; “III-V/MnAs 磁気ナノ構造におけるスピン起電力および巨大な磁気抵抗効果”;慶応大学,2009年12月22日.
7. (Invited) ファム ナム ハイ; 特定領域研究（スピン流の創出と制御）第２回 若手研究交流会; “六方晶MnAs ナノ微粒子におけるスピン緩和時間の評価”; 物質材料研究機構, 筑波, 2009年12月14日.
6. (Invited) ファム　ナム　ハイ，大矢 忍，田中 雅明，前川 禎通，Stewart Barnes; 2009年秋季第70回応用物理学会学術講演会　シンポジウム “スピン流が生み出す新しい物性”; 9p-ZD-5; “スピン起電力と超巨大磁気抵抗効果（実験）～ファラデー法則は超えられるか？”;富山大学, 2009年9月9日.
5. (Invited) P. N. Hai, S. Ohya, S.E. Barnes, S. Maekawa, and M. Tanaka; The 14th International Conference on Modulated Semiconductor structures (MSS-14); M6a, “Electromotive force and magnetoresistance (~100,000%) in magnetic tunnel junctions with zinc-blende MnAs nanomagnets”, Kobe, Japan, July 19-24, 2009.
4. (Invited) M. Tanaka, P. N. Hai, M. Yokoyama, and S. Ohya; The 5th international school and conference on spintronics and quantum information technology (Spintech V); “Properties and Functionalities of GaAs:MnAs nanocomposites”; Cracow, Poland, July 7-11, 2009.
3. (Invited) S. Ohya, P-N. Hai, and M. Tanaka “III-V- Semiconductor-Based Ferromagnetic Heterostructures”, Asian Magnetics Conference 2008, Busan, Korea, December 10-13, 2008.
2. (Invited) M. Tanaka, P-N. Hai and S. Ohya; 13th Advanced Heterostructures and Nanostructures (AHNW); Spintronic I section; “Huge magnetoresistance and electromotive force in Zinc-Blende MnAs nanoparticles / III-V semiconductor hybrid structures”; Hawaii, USA, December 7-12, 2008.
1. (Invited) 大矢 忍，ファム ナム ハイ，水野 洋輔，田中 雅明；平成19年秋季第68回応用物理学会関連連合講演会；シンポジウム講演「ナノスピントロニクスにおける量子効果と関連現象」；“Ⅲ－Ｖ族強磁性半導体へテロ構造におけるトンネル磁気抵抗効果と共鳴トンネル効果”；北海道工業大学； 2007年9月6日.

他の国際学会、国内学会の発表リストはこのリンクで観覧いただけます。

 

■　特許

1. 発明者：ファムナムハイ, 菅原 聡, 田中 雅明

発明名称：論理回路および単電子スピントランジスタ

特許番号：第4574674号
2. 発明者：田中雅明、ファムナムハイ、大矢忍、スチュワート バーンズ、前川禎通

発明の名称：磁気電気エネルギー変換装置、電源装置および磁気センサ

国際出願番号：PCT/JP2010/053668, 国際公開番号: WO2010/101251
3. 発明者：ファムナムハイ、田中雅明

発明の名称：発光材料、発光材料の製造方法、発光素子、及び発光デバイス

国内出願番号：特願2014-017176
4. 発明者：ファムナムハイ、田中雅明、グエンタントゥ

発明の名称：強磁性半導体、その製造方法およびそれを用いた磁気センサ

国内出願番号:特願2017-109044
＊5. 発明者：ファムナムハイ、ゲィン　フン　ユィ　カン

発明の名称：磁性体とＢｉＳｂの積層構造の製造方法、磁気抵抗メモリ、純スピン注入源

国内出願番号：特願2017- 177564
国際出願番号：PCT/JP2018/034191
日本出願番号：特願02019-542310
日本登録番号：特許第7227614号

＊本発明に基づいた産学連帯が実施中
＊６. 発明者: Pham Nam Hai, Nguyen Huynh Duy Khang

発明の名称:MANUFACTURING METHOD FOR MULTILAYER STRUCTURE OF MAGNETIC
BODY AND BiSb LAYER, MAGNETORESISTIVE MEMORY, AND PURE SPIN
INJECTION SOURCE

国際出願番号：PCT/JP2018/034191
米国出願番号：US16/647788
米国登録番号：US11637234

＊本発明に基づいた産学連帯が実施中
＊７. 発明者：ファム　ナム　ハイ, 白倉　孝典

発明の名称：スピンホール発振器および磁気記録デバイス、計算機

国内出願番号：特願2019-037682
PCT出願番号：PCT/JP2020/007010

＊本発明に基づいた産学連帯が実施中
８. 発明者：ファム　ナム　ハイ,　八尾　健一郎,　中野　総一郎

発明の名称：磁気抵抗メモリ

国内出願番号：特願2019-176032
９. 発明者：ファム　ナム　ハイ,　グエン　フン　ユィ　カン,　白倉　孝典

発明の名称：磁気記録デバイス

国内出願番号：特願2019-176032
＊10. 発明者：Quang Le, Cherngye Hwang, Brian R. York, Thao A. Nguyen, Zheng Gao, Kuok San Ho, Pham Nam Hai

発明の名称：BiSb Topological Insulator with Novel Buffer Layer that Promotes a BiSb (012) Orientation

米国出願番号：US17/100199

＊本発明に基づいた産学連帯が実施中
＊11. 発明者：Nam Hai Pham, Quang Le, Cherngye Hwang, York R Brian, Thao A Nguyen, Zheng Gao, Kuok San Ho

発明の名称：SOT (スピン軌道トルク) MTJ (磁気トンネル接合) デバイス, MAMR (マイクロ波アシスト磁気記録), MRAM (磁気抵抗ランダムアクセスメモリ) デバイス

国内出願番号：特願2020-212229

＊本発明に基づいた産学連帯が実施中

 

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